Abstract
The results of colossal magnetoresistance (MR) relaxation investigations in nanostructured and epitaxial La-Sr-Mn-O films grown by the MOCVD technique are presented. The films were studied in a pulsed magnetic field ranged from 2 to 10 T at the temperature of 80 K. The slow relaxation of resistance which takes place during milliseconds when the magnetic field is switched off is analysed using the Kohlrausch-Williams-Watts model. It was found that this relaxation is typical of spin-glass materials and is related with properties of disordered grain boundaries of nanostructured films. The MR relaxation of epitaxial films was not observed. The influence of film preparation conditions on MR relaxation was analysed in order to develop high pulsed magnetic field sensors exhibiting small dynamic “memory” effect and operating at low temperatures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
