Abstract
The physics of slow relaxation of photo-excited carriers in semiconductors is an important but poorly understood problem in condensed matter physics. We focus on photo-induced conductivity, which persists for a long time after removal of the photo-excitation. This slow relaxation of photo-excited carriers is known as persistent photo-conductivity (PPC) and has been observed in several semiconductors, manganites and high-temperature superconductors. In this article, we explore the microscopic mechanisms responsible for slow relaxation of nonequilibrated photo-carriers in three technologically important semiconductors, Al x Ga1 −x As, SiC and GaN. Some important experimental facts concerning the microscopic origin of PPC are described, with particular emphasis on those which indicate the need for new approaches other than the phenomenological barrier-driven model of slow relaxation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
