Abstract
Data on photoconductivity relaxation due to one of the radiation defects in p-type silicon employed in radiation technology are analyzed on the basis attachment levels. Defects formed by divacancies in a positive charge state (W+), λ=4 µm, are investigated. It is shown that this defect is an attachment level with respect to deeper levels of radiation defects, for example, a K center (which appears clearly after preliminary short-wavelength irradiation). As a result, processes with short relaxation times appear in the photoconductivity. It is also shown that fast photoconductivity relaxation can be obtained in this material either by increasing to 15 MeV the energy of the electrons used to introduce a given radiation defect or by increasing the intensity of the irradiation with 1-MeV electrons.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
