Abstract
To examine the slow pH response of ion sensitive field effect transistors (ISFETs) with a silicon nitride gate-insulator, measurements were carried out in a thermostated measurement set-up by generating a stepwise increase and decrease of the pH in a range between pH 5 and 8. The slow response curves obtained were fitted to a multiexponential model to extract time constants and amplitudes of the various response effects. As a result, two exponential effects with different behaviour were found for the slow pH response. Moreover, a dependence of the response time from the direction of the pH-step was found. Based on these results, a buried layer beneath the gate-insulator surface with a heterogeneous site distribution is proposed as a phenomenological explanation for the slow response.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
