Abstract
The profiles of the distribution of Si+ ions over the depth of single-crystal silicon were calculated by the molecular dynamics method. The inelastic energy losses during deceleration are determined within the electron density functional theory. The factors affecting the ion channeling process are analyzed. In particular, the existence of the mass effect for the critical channeling angle is confirmed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
