Abstract
We demonstrate horizontal slot waveguides using high-index layers of polycrystalline and single crystalline silicon separated by a 10 nm layer of silicon dioxide. We measure waveguide propagation loss of 7 dB/cm and a ring resonator intrinsic quality factor of 83,000. The electric field of the optical mode is strongly enhanced in the low-index oxide layer, which can be used to induce a strong modal gain when an active material is embedded in the slot. Both high-index layers are made of electrically conductive silicon which can efficiently transport charge to the slot region. The incorporation of conductive silicon materials with high-Q slot waveguide cavities is a key step for realizing electrical tunneling devices such as electrically pumped silicon-based light sources.
Highlights
The remaining critical capabilities yet to be demonstrated on the integrated silicon photonic platform using standard microelectronic fabrication processes are electrically pumped amplification and lasing within a silicon waveguide [1]
Pumped lasers have been demonstrated with IIIV materials evanescently coupled to a silicon waveguide [2, 3], these approaches rely on a wafer bonding step which is low throughput and not currently a standard microelectronic fabrication process
A guided optical mode with a polarization normal to the slot interface has a large electric field enhancement within the low-index slot region [9, 10] which supports an efficient conversion of material gain to modal gain [11]
Summary
The remaining critical capabilities yet to be demonstrated on the integrated silicon photonic platform using standard microelectronic fabrication processes are electrically pumped amplification and lasing within a silicon waveguide [1]. It is advantageous to combine a silicon waveguide structure with a more efficient 1550 nm gain material for on-chip applications. Pumped lasers have been demonstrated with IIIV materials evanescently coupled to a silicon waveguide [2, 3], these approaches rely on a wafer bonding step which is low throughput and not currently a standard microelectronic fabrication process. In this paper we design, analyze, and experimentally demonstrate a novel silicon slot waveguide structure with geometry and materials suitable for electrical pumping of an active gain material
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