Abstract
The relationship between Ce content/CeSn3 sizes and the whiskers growth is newly reported systematically. The whiskers growth can be observed in the surface of bulk CeSn3 particles, the rate of whisker growth was significantly slowed with Ce content lower than 0.1 wt%. At higher concentration of Ce, whisker growth rate becomes higher and noticeable. It is thought that the higher Ce chemical potential for oxidation provides a path for the mechanism of whisker growth. With all the other benefits of Ce addition, the potential to promote whisker growth indicate that only dilute concentration of Ce can be tolerated in SnAgCu alloys without whiskering effect. The results demonstrated that the trace amount of Ce can be utilized as additive into SnAgCu solder in microelectronic industry.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
