Abstract
We theoretically studied size-dependent emission properties and intersubband (ISB) transitions in cubic InN ( c-InN) quantum dots (QDs) and In-rich c-InGaN clusters. The quantum size effect can affect the energy levels and emission properties of such nano-structures, depending on composition, size, effective mass, and strain. In small c-InN QDs and In-rich c-InGaN clusters, strong quantum size effect enhances size-dependent emission properties and leads to fewer eigen-states. In larger c-InN QDs and In-rich InGaN clusters, ISB transitions between eigen-states of the conduction band can be applied in telecommunication devices. By varying the sizes of nano-structures, we can control the largest ISB transition energy difference between the ground state and the highest confined eigen-state. Simulation results also show that ISB absorption wavelengths can be altered by changing the composition and size of nano-structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
