Abstract
Analytical expressions for the size dependence of the Fermi electronic energy of ultrathin metal films on a dielectric substrate have been derived in the model of free electrons and finite-depth asymmetric potential well. The work functions have been calculated for Al films on SiO2 and Al2O3. It has been shown that the presence of a dielectric leads to a shift in the work function, while retaining the general character of the size dependences.
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