Abstract
AbstractBi single crystals of high perfection (having extremely high resistance ratios r4.2 = ϱ290 K/ϱ4.2 K) are grown by the mould growing method. In these crystals, the thickness dependence of the resistance ratio r4.2 and the temperature dependence of the electrical resistance are investigated in a temperature range between 2 and 77 K. In the range of the diffusion size effect, a markedly different behaviour is found to occur in the thickness dependence of the two crystal orientations investigated (j ‖ C3; j ‖ C2). An anisotropy of the slope of the T2‐terms is detected in the temperature dependences of the electrical resistance in the temperature interval from 2 to 16 K.
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