Size distribution and visible luminescence of silicon nanoparticles embedded in SiNx thin film: Role of RF power in PECVD

Abstract

This paper presents, the studies of the influence of (radio frequency) RF power on the size distribution and visible photoluminescence (PL) of SiNx thin film deposited at 300[Formula: see text]C of substrate temperature by plasma enhanced chemical vapor deposition. RF power was varied (5–50[Formula: see text]W), and its aftereffect on the optical properties of thin films was investigated. By increasing the RF power between 5[Formula: see text]W and 25[Formula: see text]W, main PL peak showed a red shift with an increase in PL intensity, which is associated with an increase in the silicon nanocrystals size and density, respectively. Results obtained were confirmed with High-resolution transmission electron microscopy micrographs and from the statistical calculations. By attaining a precise RF power value, stable silicon nitride thin film with suitable optical properties can be achieved for the potential fabrication of optoelectronic devices.