Abstract
This paper presents, the studies of the influence of (radio frequency) RF power on the size distribution and visible photoluminescence (PL) of SiNx thin film deposited at 300[Formula: see text]C of substrate temperature by plasma enhanced chemical vapor deposition. RF power was varied (5–50[Formula: see text]W), and its aftereffect on the optical properties of thin films was investigated. By increasing the RF power between 5[Formula: see text]W and 25[Formula: see text]W, main PL peak showed a red shift with an increase in PL intensity, which is associated with an increase in the silicon nanocrystals size and density, respectively. Results obtained were confirmed with High-resolution transmission electron microscopy micrographs and from the statistical calculations. By attaining a precise RF power value, stable silicon nitride thin film with suitable optical properties can be achieved for the potential fabrication of optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.