Abstract
Due to ultra-long mean free path of Carbon nanotube (CNT), CNT field effect transistor (CNTFET) is supposed to operate in ballistic regime and therefore CNTEFT is under extensive research for its application in high performance devices replacing conventional silicon technology. Surrounding gate topology which is better performing than back-gated structure is considered for physical self-consistent modeling under NEGF framework using tight binding approximation. A detailed study of transport in ballistic regime reveals that equally doped source/drain (S/D) and channel with no potential gradient, short S/D about 5 nm, gate length close to 10 nm and (13, 0) zigzag CNT channel is optimum for designing high performance CNTFET.
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