Abstract
Nanofabrication methods and a device architecture are combined to allow for four-point electric, thermoelectric, and electric field-effect measurements on individual Bi nanowires. The figure shows a false-color SEM image of a typical device used in this study, with the 11 Bi nanowires shown as a red → white gradient. The temperature dependence of the various transport properties as a function of nanowire width is investigated and discussed.
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