Abstract
An experimental characterization of cupric oxide nanowire (CuO NW) growth from thermally oxidized, microstructured Cu thin films is performed. We have systematically studied the influence of the thickness and dimension of Cu layers on the synthesis of CuO NW. The objective was to determine the optimum Cu geometries for increased CuO NWs growth to bridge the gap between adjacent Cu structures directly on the chip for gas sensing applications. Thresholds for CuO-NW growth regarding film thickness and lateral dimensions are identified based on SEM images. For a film thickness of 560 nm, NWs with lengths > 500 nm start to grow from the edges of Cu structures with an area ≥ 4 µm2. NWs growing from the upper surface were observed for an area ≥ 16 µm2. NW growth between adjacent thermally oxidized thin films was analyzed. The study provides information on the most relevant parameters of CuO NWs growth, which is mandatory for integrating CuO NWs as gas sensor components directly on microchips. Based on this result, the gap size of the structure was varied to find the optimum value of 3 µm.
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