Abstract
Simple and unified models have been established for size-dependent crystallization activation energy and nucleation rate of Ge2Sb2Te5 nanowires in the amorphous phase based on size-dependent melting temperature of low dimensional materials. The models are free of any adjustable parameters and predict a decreasing trend of crystallization activation energy and an increasing trend of nucleation rate in the amorphous phase with the size dropping of nanocrystals. Both the phenomena attribute to the increasing surface to volume ratio with the size dropping and surface atoms plays an important role. The model predictions agree well with available experimental results of Ge2Sb2Te5 wires, which supply an easy way to understand crystallization behavior of phase change memory nanomaterials.
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