Abstract
In this work we present in situ investigations on the increase of the hcp-to-fcc transition temperature for Co with respect to the bulk value (420°C) when nanoclusters are considered. Starting from Co:SiO2 composites obtained by ion implantation with average Co cluster size of about 5nm, a transition temperature between 800°C and 900°C is found upon thermal annealing in vacuum by in situ transmission electron microscopy. Preliminary results on electron irradiation to promote the transition at lower temperatures are presented.
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