Abstract
AbstractWe have investigated the growth conditions of nanoscaled MnAs dots fabricated on sulfur‐terminated GaAs (001) surfaces with regard to the surface coverage and substrate temperature (Ts) during the growth. Scanning tunneling microscopy (STM) images reveal that the size of nanoscaled MnAs dots is controllable with respect to the values of Ts in the range of 200–300 °C. For high Ts values, the sizes of the dots become large and are limited to a diameter and height of 15 and 8 nm, respectively. Further, STM observations indicate the formation of two types of MnAs dots when more than three monolayers are grown. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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