Abstract
Time-resolved photoluminescence (PL) has been studied for B- and Sb-dopedSi nanocrystals (NCs) fabricated by ion beam sputtering and annealing.For B-doped Si NCs, the PL intensity as well as the PL lifetime (τPL) increases asNC size (d) varies from 1.5 to 2.6 nm, similar to the case for undoped Si NCs, but with further increase ofd, they decrease, possibly resulting from the increase of optically less active NCswith the increase of NCs containing more dopants. The PL intensity andτPL monotonically decrease with increasing doping concentration (nD), irrespective of doping element. Si NCs show smallerτPL in B doping than in Sb doping over the full range ofnD. The sharp decrease in PL intensity, accompanied by the gradual decrease inτPL for thehigher nD of Sb, may be attributed to Auger recombination due to the presence of Sb inside Si NCs.The higher PL quench rate by Sb compared to B could be attributed to better ionization ofSb dopants in Si NCs.
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