Size and defect related broadening of photoluminescence spectra in ZnO:Si nanocomposite films

Abstract

Nanocomposite films of zinc oxide and silicon were grown by thermal evaporation technique using varying ratios of ZnO:Si in the starting material. Structural analyses reveal the role of ZnO and amorphous silicon interface in contributing to the relatively less common blue photoluminescence emissions (at ∼410 and 470nm). These blue peaks are observed along with the emissions resulting from band edge transition (370nm) and those related to defects (520nm) of ZnO. Careful analysis shows that along with the grain size of ZnO, a suitable compositional ratio of ZnO to silicon is critical for the coexistence of all the four peaks. Proper selection of conditions can give comparable photoluminescence peak intensities leading to broad-band emission.