Abstract
We have investigated the sites and motional properties of Mu − defect centers in GaN using muon nuclear-quadrupole level-crossing resonances (QLCR) and zero-field muon-spin depolarization measurements. The QLCR spectra imply that Mu − occupies interstitial locations next to Ga atoms, consistent with the two inequivalent Ga anti-bonding sites for the Wurtzite structure. The Mu − related depolarization shows an increase in average dipolar fields near 200 K and indicates motion above 500 K. We discuss the properties of the two separate Mu − states obtained from a model-dependent constrained fit to the zero-field data.
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