Abstract
The atomic structure of the Si(111)−7×7 surface after irradiation of 2.48 eV laser pulses has been studied using scanning tunneling microscopy. In the range of fluence at which no indication of melting is observed, the examination of more than 300 unit cells on irradiated surface has revealed that the number of vacancies formed at the center-adatom site is much larger than that at the corner-adatom site, showing the strong site-dependent yield of laser-induced atomic emission.
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