Abstract
Spectroscopically identifying the site information of doping atoms in a matrix promotes the understanding of transport regulation in thermoelectric bulks, but it is challenging to quantify because of the low doping amount. In this work, we present a systematic site characterization of Mn atoms in a Mn-doped SnTe alloy by utilizing the method of “atom location by channeling enhanced microanalysis.” Together with theoretical calculation, we demonstrated that the Mn atoms were doped by replacing the Sn atoms. Our experiment shows the validity of this method for the location determination of foreign impurities in thermoelectric systems made from heavier atoms. It is believed that this technique can be used as a general tool to explore the constitutional information of various thermoelectric materials.
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