Site-dependent and composition-dependent spatial dielectric functions for Ga 1−xAl xAs

Abstract

In this paper we present analytical site-dependent and composition-dependent spatial dielectric functions for Ga 1− x Al x As involving compositions from x =0.1 to x =0.4 in steps of 0.1. The spatial dielectric functions we present describe the response of the valence electrons of Ga 1− x Al x As to charges Z = ± 1 (in atomic unit) placed on Ga, Al and As sites. To these sites we assign the effective charges (due to the partial ionicity of the bonds) of Z = +0.16, +0.20 and −0.16 (in atomic unit).