Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices

Abstract

Site-controlled InAs quantum wires were fabricated on cleaved edges of AlGaAs/GaAssuperlattices (SLs) by solid source molecular beam epitaxy. The cleaved edge ofAlGaAs/GaAs SLs acted as a nanopattern for selective overgrowth after selective etching.By just growing 2.0 ML InAs without high temperature degassing, site-controlled InAsquantum wires were fabricated on the cleaved edge. Furthermore, atomic forcemicroscopy demonstrates the diffusion of In atoms is strong toward the direction on the (110) surface.