Abstract
We review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN). In such systems, the formation of stable N-H complexes removes the effects that nitrogen has on the alloy properties, thus enabling the in-plane engineering of the band bap energy of the system. Both a lithographic approach and/or a near-field optical illumination—coupled to the ultra-sharp diffusion profile of H in dilute nitrides—allow us to control the hydrogen implantation and/or removal on a nanometer scale. This, eventually, makes it possible to fabricate site-controlled quantum dots that are able to emit single photons on demand. The strategy for a deterministic spatial and spectral coupling of such quantum emitters with photonic crystal cavities is also presented.
Highlights
Owing to their ability to act as sources of non-classical light in the solid state, semiconductor quantum dots (QDs) might serve as the main building blocks of several potentially ground-breaking devices, enabling the first practical implementation of quantum information technology [1,2]
As2017 regards the properties of the quantum emitter integrated in the cavity, it is important to stress that in this condition the site-controlled QD is able to emit at the single photon regime, which is a crucial property for the successful employment of these systems in future applications
As regards the properties of the quantum emitter integrated in the cavity, it is important to stress that in this condition the site-controlled QD is able to emit at the single photon regime, which is a crucial property for the successful employment of these systems in future applications
Summary
Owing to their ability to act as sources of non-classical light in the solid state, semiconductor quantum dots (QDs) might serve as the main building blocks of several potentially ground-breaking devices, enabling the first practical implementation of quantum information technology (e.g., quantum computation, quantum teleportation, and quantum cryptography) [1,2]. At variance with the approaches proposed so far in the literature that rely on complex growth procedures often followed by cumbersome processing steps, starts from standard dilute-nitride quantum well samples and acts at a post-growth level. It is easy, cost-effective, and extremely versatile. It is scalable and guarantees an easy integration of the fabricated, site-controlled quantum emitters with photonic crystal cavities It allows a spatial and spectral accuracy comparable to—or even better than—those obtained with other, more established techniques (see Table 1). (Section 4), our strategy for the deterministic spatial and spectral coupling of such quantum emitters with photonic crystal cavities is presented
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