Site-controlled fabrication of dimension-tunable Si nanowire arrays on patterned (001)Si substrates

Abstract

In this study, we fabricated well-ordered arrays of site-controlled, vertically-aligned Si nanowires on the desired areas of pre-patterned (001)Si substrates by employing the nanosphere lithographic technique in combination with the Au-assisted selective etching process. The results of transmission electron microscopy and selected-area electron diffraction analysis show that the Si nanowires that fabricated on the patterned (001)Si substrates have a single-crystalline nature and form along the [001] direction. The length of the Si nanowires was found to increase linearly with the Au-assisted etching time. Scanning electron microscopy images clearly revealed that by adjusting the sizes of the nanosphere template and the etching temperature and time, the diameter and length of the patterned Si nanowires could be effectively tuned and accurately controlled. Furthermore, the diameters of the Si nanowires produced at various temperatures and time were found to be relatively uniform over the entire length. The combined approach presented here provides the capability to fabricate a variety of size-, length-tunable 1D Si-based nanostructures on various patterned Si-based substrates.