Si/Sb superlattice-like thin films for ultrafast and low power phase change memory application

Abstract

After compositing with Si, the superlattice-like (SLL) Si/Sb thin film had higher crystallization temperature (~231°C), larger crystallization activation energy (2.95eV), and better data retention ability (126°C for 10years). The crystallization of Sb in SLL Si/Sb thin films was restrained by the multilayer interfaces. The reversible resistance transition could be achieved by an electric pulse as short as 10ns for [Si(22nm)/Sb(2nm)]2-based PCM cell. A lower operation power consumption of 0.02mW and a good endurance of 1.0×105cycles were achieved. In addition, SLL [Si(22nm)/Sb(2nm)]2 thin film showed a low thermal conductivity of 0.11W/(m·K).