Abstract
The phase change characteristics of Ge 2 Sb 2 Te 5 (GST) films for phase change random access memory devices were improved by incorporating SiO 2 into the GST film using cosputtering at room temperature. Isochronal annealing showed an increased resistivity of the crystallized GST films in proportion to the incorporated quantity of SiO 2 which leads to a decrease in the writing current. SiO 2 also inhibits crystallization of the amorphous GST film which can improve the long term stability of the metastable amorphous phase.
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