SiON and SiO 2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

P Delcroix,S Blonkowski,M Kogelschatz,M Rafik,O Gourhant,D Jeanjean,R Beneyton,D Roy,X Federspiel,F Martin,X Garros,H Grampeix,R Gassilloud

doi:10.1016/j.mee.2011.03.058

SiON and SiO 2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

P Delcroix, S Blonkowski + Show 11 more

https://doi.org/10.1016/j.mee.2011.03.058

Copy DOI

Journal: Microelectronic Engineering	Publication Date: Mar 27, 2011
Citations: 8

Affiliation: Atomic Energy and Alternative Energies Commission, STMicroelectronics (France), CEA Grenoble, CEA LETI, Joseph Fourier University, Université Grenoble Alpes, French National Centre for Scientific Research

#Time Dependent Dielectric Breakdown Measurements #Time Dependent Dielectric Breakdown + Show 8 more

Abstract
Full-Text
Similar Papers

Abstract

Time dependent dielectric breakdown (TDDB) measurements on a nano-scale using an AFM tip under ultra high vacuum as upper electrode are systematically compared to device measurements in this paper. Both studies were performed on the same SiON or SiO 2/HfSiON gate oxides. The shape factor of the TDDB distribution and the acceleration factor are compared at both scales.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

More From: Microelectronic Engineering

Paper Title

Journal

Date

Author

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.