SiO2 substrate passivation effects on the temperature-dependent electrical properties of MoS2 prepared by the chemical vapor deposition method

Abstract

This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport in MoS2. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS2 thin film deposited on a SiO2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS2 thin film deposited on a SiO2 substrate with H2O2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS2 thin film deposited on a SiO2 substrate with (NH4)2S x treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS2-based transistor performance.