Abstract
The thermal behaviour of samples with nominal composition 80/20=SiO2/SnO2, class B, 76.8/19.2/4.0=SiO2/SnO2/Sb2O5, class C1, and 76.8/19.2/2.0/2.0=SiO2/SnO2/Sb2O5/Sb2O3, class C2, is studied in the interval 25–1050°C by various instrumental methods. Results on these classes of samples, obtained from alkoxide precursors, are compared themselves and with samples of class A obtained from Si(OEt)4 and SnCl4. The segregation and crystallization of SnO2 occurs at 400°C in the presence of microdomains of SnO2·nH2O in the SiO2 gel matrix (class A), whereas it is observed at 700°C for samples B and C composed of Sn and Sb cations homogeneously dispersed in SiO2. This fact implies different mechanisms of SnO2 nucleation and growth. The crystallization of SiO2 is observed at 1200°C for samples A, at 1050°C for B and at 800°C for C. For this latter, the presence of Sb-oxide/ SiO2 reactive glass is invoked to the low-temperature crystallization of SiO2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
