SiO2/Si 및 Si 기판에 rf magnetron sputtering법으로 증착된 적외선 센서용 La0.7Sr0.3MnO3CMR 박막 저항체 특성연구

Abstract

films were deposited on /Si and Si substrates annealed at by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, thin films on /Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of thin films was increased with increasing oxygen gas flow rate. The sheet resistance of thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of thin films were obtained from -2.0% to -2.2%.