Abstract
By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma-enhanced chemically vapor deposited SiO2/InP structures has been significantly reduced. Capacitance–voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be assoicated with the formation of a p-type inversion layer and with the presence of interface traps with very slow response times. This surface preparation procedure yields an InP native oxide which has no detectable In2O3 and is contaminated with K.
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