SiO2 hole traps with small cross section

Abstract

SiO2 hole traps with small cross section (σ≤10−15 cm2) in Al gated metal–oxide–silicon capacitors have been studied using vacuum ultraviolet hole injection in combination with capacitance voltage measurements. The data show that small σ hole traps are related to H/hole pairs or protons trapped in the oxide. Since accumulated positive charge and H vanish simultaneously from the oxide in times of the order of 102 s, it is proposed that they migrate together through the oxide as a proton. The small σ hole traps are not associated with defects in the as-grown oxide; they are generated by radiation induced release of atomic H. Their number is governed by the rates of release and of removal (dimerization) of atomic H.