Abstract
ABSTRACTThis paper reports the results of a study of thin SiO2 growth and annealing in a lamp heater (Heatpulse). Good quality 5–10 mn SiO2 films on silicon have been obtained. For good oxides the average destructive breakdown- field was 13 MV/cm and very few or no low-field breakdowns were found. The breakdown statistics were obtained with Al gate capacitors and by a current staircase-ramp technique which is described in the paper. Processing with a single oxidation step, oxidationannealing, and oxidation-annealing-oxidation are discussed.
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