Abstract
SiO2/CeO2composite abrasives were synthesized by homogenous precipitation method.The phase composition and morphology of the as-prepared composite nano-spheres were characterized by a X-ray Diffractomer(XRD),a Transmission Electron Microscopy(TEM),and a Fourier Transfer Infrared(FT-IR)spectrometer. The as-prepared composite nano-spheres were used as polishing abrasives for Chemical Mechanical Polishing(CMP)of a sapphire substrate,then the surface roughness of sapphire substrate after polishing with the composite abrasive slurry was measured by a Atomic Force Microscopy(AFM).The results show that the average roughness of the polished sapphire substrate is 0.32nm and the material removal rate is 16.4nm/min for composite abrasives,however,those are 0.92nm and 20.1nm/min for SiO2abrasive.It demonstrates that the material removal rate of composite abrasives is less than that of the SiO2,but it has a good surface quality.These results mean that the SiO2/CeO2composite satisfies the technical requirements for sapphire Light Emission Diode(LED)substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
