Abstract
The effects of SiO₂ impurity on the high temperature resistivities of AlN ceramics have been investigated. When SiO₂ was added into 1 wt% Y2O3-doped AlN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at 600℃, which were attributed to grain and grain boundary, respectively. SiO₂ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AlN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.
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