SiO x films prepared using RF magnetron sputtering with a SiO target

Abstract

In this study, SiO x thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiO x films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet–visible transmittance measurement. The x in SiO x film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiO x films from 3.7 to greater than 6 eV.