Abstract
The effect of SiO 2 impurity on the grain-boundary conduction in Sr- and Mg-doped lanthanum gallate (La 0.8 Sr 0.2 Ga 0.8 Mg 0.2 O 3-δ , LSGM) was studied. The grain-boundary conduction of LSGM was slightly affected, even by the addition of 500-2000 ppm SiO 2 , while the apparent grain-boundary resistivity was increased up to ∼780 times in gadolinia-doped ceria by the doping of 500-2000 ppm SiO 2 . The high tolerance of the grain-boundary conduction against siliceous impurity in the LSGM specimen was explained by the gathering of the acidic siliceous phase near the basic SrO component.
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