吸引プラズマエッチング法を用いたSiO<sub>2</sub>ダイアフラム構造作製技術の開発

Abstract

We propose a simple method to fabricate SiO2 diaphragms supported on a Si substrate by using the inward plasma etching. In this method, a Si substrate covered with SiO2 was locally etched with the inward plasma from the Si side. When using a SiO2 (280 nm)/Si (380 μm) substrate, a SiO2 diaphragm with a diameter of ∼50 μm was fabricated at the bottom of the bowl-like hole with an opening diameter of ∼1.2 mm. This method does not require lithographic processes which are inevitable for the conventional microfabrication techniques and may be used to fabricate MEMS devices in the lab.