SiNx插入层的生长位置对GaN外延薄膜性质的影响

Abstract

GaN films with SiNx interlayer were grown on sapphire substrates by metal organic chemical vapor deposition.The effect of nanoporous SiNx interlayer growth position on the properties of high-quality GaN epitaxial films was investigated systematically.The high-resolution X-ray diffraction spectra was achieved when a SiNx interlayer was adopted and inserted on a rough GaN layer.The screw and edge dislocation densities have been calculated.The optical and electrical properties of the GaN films were characterized by Raman scattering spectra,low temperature photoluminescence spectra and Hall measurements,etc.The position of the SiNx interlayer has no impact on the strain in GaN films,but the residual carrier concentration changes with the position of the interlayer.