Abstract
Contactless electroreflectance studies coupled with numerical calculations are performed on in-situ SiNx capped N-polar III-nitride high electron mobility transistor (HEMT) structures with a scaled channel thickness in order to analyse the built-in electric field in the GaN channel layer. The experimentally obtained field values are compared with the calculated field versus channel thickness curves. Furthermore, the experimental and theoretical sheet carrier densities, ns, are evaluated. While a gradual decrease in carrier concentration with decreasing channel thickness is expected for N-polar structures, experimentally a sudden drop in the ns values is observed for samples with very thin channels. The additional loss in charge was associated with a change in the SiNx/AlGaN interface Fermi level at very thin channel thicknesses.
Highlights
For CER measurements the samples were mounted in a capacitor with a half-transparent top electrode made from a copper-wire mesh
An air gap of ~ 0.5 mm was kept between the sample surface and the top electrode
Other relevant details on CER can be found in Refs.[32,33]
Summary
For CER measurements the samples were mounted in a capacitor with a half-transparent top electrode made from a copper-wire mesh.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
