Abstract

This paper proposes a novel operational amplifier (OPA) voltage-controlled oscillator (VCO) circuits on the basis of impedance converters. The VCO can operate over a frequency range exceeding unity-gain bandwidth due to the location of the tank circuit, not at the output of the OPA, but at the noninverting input. The paper presents the mathematical modeling of oscillated amplitude and start-up conditions. The simulation results confirm the theoretical achievements. The designed and simulated VCO uses an ultra-low noise wideband OPA LMH6629MF, covers a frequency band between 0.830 GHz and 1.429 GHz, and exhibits a maximum in-band total harmonic distortion (THD) of 1.7%. It has a maximum in-band phase noise of −139.3 dBc/Hz at 100 kHz offset frequency and has an outstanding value of a standard figure of merit (FoM) of −198.6 dBc/Hz. The zero-peak amplitude of output voltage is from 3.2 V to 4 V for all generated frequencies at a supply voltage of ±5 V. The fabricated prototype-oscillator based on OPA LMH6624 operates at a frequency of 583.1 MHz with a power level of 0 dBm.

Highlights

  • Sinusoidal oscillators are used in almost all systems of receiving and transmitting information, as well as in measuring instruments and systems

  • Topology in [13]resistors uses the are OPAthe circuit with input inductance observed this study, we propose new voltage-controlled oscillator (VCO) topologies that use the idea impedance at theIn noninverting input of theseveral

  • This article has proposed a new type of VCO based on resistorless negative impedance converter circuits

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Summary

Introduction

Sinusoidal oscillators are used in almost all systems of receiving and transmitting information, as well as in measuring instruments and systems. One of the most rapidly developing class of sinusoidal oscillators is the class of the voltage-controlled oscillator (VCO). Voltage-controlled oscillators are commonly used in digital frequency synthesizers, which are one of the main subsystems of modern communications systems. The rapid development of modern communications and instrumentation systems has created a high demand for low noise VCOs [1,2,3]. Modern microwaves sinusoidal oscillators use bipolar junction transistors (BJT), heterojunction bipolar transistors (HBT), a low-noise high-electron-mobility-transistors (HEMT) and pseudomorphic HEMT (pHEMT) as active devices for achieving low phase-noise performance [4,5,6]. The appearance on the market of a ultra-low-noise, high-speed, broadband operational amplifier (OPA) creates the possibility of their use in the sinusoidal oscillators in the ultra-high frequency range.

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