Sintering temperature dependence of microwave dielectric properties in Mg 4(TaNb 1− xV x)O 9 compounds

Abstract

The relationship between the sintering temperature and the microwave dielectric properties of Mg 4(TaNb 1− x V x )O 9 (MTNV) compounds were investigated in this study in order to reduce the sintering temperature of the compound. A small amount of V 2O 5 doping lowered the sintering temperature of the MTNV compounds. The variations in the dielectric constant and the quality factor of the MTNV compounds depended on the amount of V 2O 5 doping and the sintering temperature; a small amount of V 2O 5 doping was effective in allowing low sintering temperatures without a detrimental effect on these dielectric properties. As a result, a dielectric constant of approximately 12 and a quality factor of approximately 200,000 GHz were obtained when the MTNV compounds with x = 0.2 was sintered at 1200 °C. The temperature coefficient of resonant frequency of the MTNV compound with x = 0.025 slightly changed from −63 to −73 ppm/ °C with an increased sintering temperature because of the presence of a secondary phase.