Abstract
The metallic packaging remains a big challenge for solid-state, high-power-density electronic devices, such as SiC chips, due to the frequent failure of solder joints in these components. Herein, the SiC Schottky diode was successfully soldered on a Mo substrate using eutectic Au80Sn20 solder at a low temperature of 320 °C. The results show excellent reliability and performance of the SiC chips. The chips can maintain outstanding performance after 2000 h at 280 °C and 500 cycles of heating and cooling experiments. Hence, this study demonstrates that this welding method has potential applications in high-power SiC chips with excellent thermomechanical reliability.
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