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Abstract
The microstructure and electrical properties of quaternary ZnO–V 2O 5–MnO 2–Nb 2O 5 ceramics were investigated at different sintering temperature (875–950 °C). The average grain size increased from 4.4 μm to 9.6 μm with increasing sintering temperature. The breakdown field decreased from 6991 V/cm to 943 V/cm with increasing sintering temperature. Proper sintering for quaternary ZnO–V 2O 5–MnO 2–Nb 2O 5 ceramics led to surprisingly high nonlinear coefficient (50). The donor concentration increased from 3.33 × 10 17 cm −3 to 7.64 × 10 17 cm −3 with increasing sintering temperature and the barrier height exhibited the maximum value (1.07 eV) at 900 °C.
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