Sintering and dielectric properties of Cu 2Ta 4O 12 ceramics

Abstract

In this work, Cu 2Ta 4O 12 ceramic was investigated as a promising, lead-free, nonferroelectric material with high dielectric permittivity. The results of impedance spectroscopy studies carried out at frequencies 10 Hz to 2 MHz over a wide temperature range from −55 to 700 °C were analyzed in the impedance, dielectric permittivity and electric modulus formalisms. In complex impedance plots two distinct arcs were distinguished, ascribed to the semiconducting grains and to the insulating grain boundaries. Cu 2Ta 4O 12 ceramic was found to exhibit a high dielectric permittivity exceeding 10,000 at low frequencies in the temperature range 150–740 °C. High permittivity of this material was attributed to the formation of internal (grain boundary) barrier layer capacitors. The influence of sintering conditions on microstructure, composition and dielectric properties of Cu 2Ta 4O 12 ceramics was also studied.