Abstract
A supported gas discharge sputtering system was used to investigate krypton entrapment in thick films of high rate sputter-deposited glassy metals. Krypton entrapment was studied as a function of the substrate and target voltages for various iron-yttrium, iron-zirconium, iron-silicon, iron-molybdenum, nickel-yttrium and nickel-molybdenum alloys. Continuous substrate bias was used. Krypton contents ⩾ 8 at.% were found in some of the alloys studied, all of which were deposited at rates exceeding 10 nm s-1. The dependence of the ion trapping coefficient on the substrate bias voltage is given for some of the alloys.
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