Abstract
Nanoimprint lithography has been used to fabricate micro/nano devices and has drawn widespread attention owing to its features of large scale, high resolution and low cost. Devices manufactured by nanoimprint are desired for their higher conductivity, especially in their interconnecting wires. In this paper, In nanoparticles were doped onto Ag nanoparticles to improve their properties. The optimum doping ratio was determined under our experimental conditions. Interconnecting wires which consisted of a mixture of particles achieved a 50% higher conductivity than bulk Ag sintered in N2 at 200 °C. The effect of In doping on the microstructure of interconnections was also investigated.
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