Abstract
Single-shot femtosecond laser ablation of Ti(Al/Ti)5 and (Ni/Ti)5 films on silicon substrates was studied as a function of laser fluence by means of scanning electron microscopy, energy-dispersive x-ray spectroscopy, and optical profilometry. Ablation occurs as gradual threshold-like selective removal of a few top layers at lower fluences and rather continuous removal at higher fluences, exponentially increasing versus ablated depth, with the final complete (through) ablation of the entire films. The observed selective rupture at the different internal interfaces was related to thermomechanically and chemically enhanced (interface-facilitated) explosive boiling, with the corresponding energy deposition provided by “cascaded” heat transfer in the poorly conducting Ti and Ni, and highly conducting Al layers and the interfacial thermal (Kapitza) resistance effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
